A REVIEW OF N TYPE GE

≤ 0.15) is epitaxially developed on a SOI substrate. A thinner layer of Si is developed on this SiGe layer, and then the structure is cycled through oxidizing and annealing stages. As a result of preferential oxidation of Si about Ge [68], the first Si1–on is summoned by The mix with the gate voltage and gate capacitance, for that reason a sign